A lattice-matched InGaAs and InAlAs superlattice (SL) was used to embed InAs quantum dots (QDs) on an InP(311)B substrate; this is called the digital embedding method (DEM). We controlled the emission wavelength of the InAs QDs by changing the period of the SL or the ratio of the thickness of InGaAs to that of InAlAs. In addition, we investigated the time-resolved photoluminescence (PL) of the InAs QDs using the DEM. The decay time of the PL from the QDs was estimated by fitting a single exponential curve and was 380ps in the DEM sample and 700ps in the reference sample with a conventional InGaAlAs barrier. The decay time was clearly altered by changing the embedding structure. Therefore, carrier dynamics could be controlled using the DEM.
- Molecular beam epitaxy
- Quantum dots
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics